APA (7th ed.) Citation

Huang, X., Zhang, X., Luo, X., Fang, R., Li, L., Yang, Z., . . . Zhao, Z. (2025). Enhanced structural and electrical characteristics of N-polar n-Al0.58Ga0.42N epitaxial layers grown with SiNx interlayer. Journal of Materials Science: Materials in Electronics, 36(29), 1. https://doi.org/10.1007/s10854-025-15958-7

Chicago Style (17th ed.) Citation

Huang, Xingyue, et al. "Enhanced Structural and Electrical Characteristics of N-polar N-Al0.58Ga0.42N Epitaxial Layers Grown with SiNx Interlayer." Journal of Materials Science: Materials in Electronics 36, no. 29 (2025): 1. https://doi.org/10.1007/s10854-025-15958-7.

MLA (9th ed.) Citation

Huang, Xingyue, et al. "Enhanced Structural and Electrical Characteristics of N-polar N-Al0.58Ga0.42N Epitaxial Layers Grown with SiNx Interlayer." Journal of Materials Science: Materials in Electronics, vol. 36, no. 29, 2025, p. 1, https://doi.org/10.1007/s10854-025-15958-7.