Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation.
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| Title: | Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation. |
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| Authors: | Ryu, Minjeong1, Woo, Jae Seung1, Kim, Yeonwoo1, Jeon, Joo Hyeon2, Cho, Sung In2, Choi, Woo Young1, wooyoung@snu.ac.kr |
| Source: | Advanced Electronic Materials; Dec2025, Vol. 11 Issue 20, p1-18, 18p |
| Database: | Applied Science & Technology Source |
| ISSN: | 2199160X |
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| DOI: | 10.1002/aelm.202500421 |
