APA (7th ed.) Citation

Ryu, M., Woo, J. S., Kim, Y., Jeon, J. H., Cho, S. I., & Choi, W. Y. (2025). Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation. Advanced Electronic Materials, 11(20), 1. https://doi.org/10.1002/aelm.202500421

Chicago Style (17th ed.) Citation

Ryu, Minjeong, Jae Seung Woo, Yeonwoo Kim, Joo Hyeon Jeon, Sung In Cho, and Woo Young Choi. "Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation." Advanced Electronic Materials 11, no. 20 (2025): 1. https://doi.org/10.1002/aelm.202500421.

MLA (9th ed.) Citation

Ryu, Minjeong, et al. "Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation." Advanced Electronic Materials, vol. 11, no. 20, 2025, p. 1, https://doi.org/10.1002/aelm.202500421.