Exploring the Effects of Barrier Thickness and Channel Length on Performance of AlGaN/GaN HEMT Sensors Using Off-the-Shelf AlGaN/GaN Wafers.

Saved in:
Bibliographic Details
Title: Exploring the Effects of Barrier Thickness and Channel Length on Performance of AlGaN/GaN HEMT Sensors Using Off-the-Shelf AlGaN/GaN Wafers.
Authors: Amen, Mohamed Taha1, Tran, Duy Phu1, Feroze, Asad1, Cheah, Edward1, Thierry, Benjamin1, benjamin.thierry@unisa.edu.au
Source: Applied Sciences (2076-3417); Dec2025, Vol. 15 Issue 23, p12751, 13p
Database: Applied Science & Technology Source
Full text is not displayed to guests.
Description
ISSN:20763417
DOI:10.3390/app152312751