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Exploring the Effects of Barrier Thickness and Channel Length on Performance of AlGaN/GaN HEMT Sensors Using Off-the-Shelf AlGaN/GaN Wafers.

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Title: Exploring the Effects of Barrier Thickness and Channel Length on Performance of AlGaN/GaN HEMT Sensors Using Off-the-Shelf AlGaN/GaN Wafers.
Authors: Amen, Mohamed Taha1, Tran, Duy Phu1, Feroze, Asad1, Cheah, Edward1, Thierry, Benjamin1, benjamin.thierry@unisa.edu.au
Source: Applied Sciences (2076-3417); Dec2025, Vol. 15 Issue 23, p12751, 13p
Database: Applied Science & Technology Source
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  Data: <searchLink fieldCode="JN" term="%22Applied+Sciences+%282076-3417%29%22">Applied Sciences (2076-3417)</searchLink>; Dec2025, Vol. 15 Issue 23, p12751, 13p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=190530565
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        Value: 10.3390/app152312751
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        Text: English
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      – TitleFull: Exploring the Effects of Barrier Thickness and Channel Length on Performance of AlGaN/GaN HEMT Sensors Using Off-the-Shelf AlGaN/GaN Wafers.
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              Text: Dec2025
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              Y: 2025
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