High-quality β-(Al x Ga1-x)2O3 heteroepitaxy grown on (010) Ga2O3 via MOCVD and transistor demonstration.
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| Title: | High-quality β-(Al x Ga1-x)2O3 heteroepitaxy grown on (010) Ga2O3 via MOCVD and transistor demonstration. |
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| Authors: | Wu, Haozhong1, Liu, Hongyu2, Zhou, Xuanze1, zhouxz@ustc.edu.cn, Xu, Guangwei1, Wang, Yuangang2, Lv, Yuanjie2, Feng, Zhihong2, ga917vv@163.com, Long, Shibing1 |
| Source: | Semiconductor Science & Technology; Jan2026, Vol. 41 Issue 1, p1-8, 8p |
| Database: | Applied Science & Technology Source |
| ISSN: | 02681242 |
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| DOI: | 10.1088/1361-6641/ae26c3 |
