View in EDS

High-quality β-(Al x Ga1-x)2O3 heteroepitaxy grown on (010) Ga2O3 via MOCVD and transistor demonstration.

Saved in:
Bibliographic Details
Title: High-quality β-(Al x Ga1-x)2O3 heteroepitaxy grown on (010) Ga2O3 via MOCVD and transistor demonstration.
Authors: Wu, Haozhong1, Liu, Hongyu2, Zhou, Xuanze1, zhouxz@ustc.edu.cn, Xu, Guangwei1, Wang, Yuangang2, Lv, Yuanjie2, Feng, Zhihong2, ga917vv@163.com, Long, Shibing1
Source: Semiconductor Science & Technology; Jan2026, Vol. 41 Issue 1, p1-8, 8p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 190664995
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: High-quality β-(Al x Ga1-x)2O3 heteroepitaxy grown on (010) Ga2O3 via MOCVD and transistor demonstration.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Wu%2C+Haozhong%22">Wu, Haozhong</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Hongyu%22">Liu, Hongyu</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhou%2C+Xuanze%22">Zhou, Xuanze</searchLink><relatesTo>1</relatesTo>, <i>zhouxz@ustc.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Xu%2C+Guangwei%22">Xu, Guangwei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Yuangang%22">Wang, Yuangang</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Lv%2C+Yuanjie%22">Lv, Yuanjie</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Feng%2C+Zhihong%22">Feng, Zhihong</searchLink><relatesTo>2</relatesTo>, <i>ga917vv@163.com</i><br /><searchLink fieldCode="AU" term="%22Long%2C+Shibing%22">Long, Shibing</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Semiconductor+Science+%26+Technology%22">Semiconductor Science & Technology</searchLink>; Jan2026, Vol. 41 Issue 1, p1-8, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=190664995
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1088/1361-6641/ae26c3
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 1
    Titles:
      – TitleFull: High-quality β-(Al x Ga1-x)2O3 heteroepitaxy grown on (010) Ga2O3 via MOCVD and transistor demonstration.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Wu, Haozhong
      – PersonEntity:
          Name:
            NameFull: Liu, Hongyu
      – PersonEntity:
          Name:
            NameFull: Zhou, Xuanze
      – PersonEntity:
          Name:
            NameFull: Xu, Guangwei
      – PersonEntity:
          Name:
            NameFull: Wang, Yuangang
      – PersonEntity:
          Name:
            NameFull: Lv, Yuanjie
      – PersonEntity:
          Name:
            NameFull: Feng, Zhihong
      – PersonEntity:
          Name:
            NameFull: Long, Shibing
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Text: Jan2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 02681242
          Numbering:
            – Type: volume
              Value: 41
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Semiconductor Science & Technology
              Type: main
ResultId 1