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High-quality β-(Al x Ga1-x)2O3 heteroepitaxy grown on (010) Ga2O3 via MOCVD and transistor demonstration.

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Bibliographic Details
Title: High-quality β-(Al x Ga1-x)2O3 heteroepitaxy grown on (010) Ga2O3 via MOCVD and transistor demonstration.
Authors: Wu, Haozhong1, Liu, Hongyu2, Zhou, Xuanze1, zhouxz@ustc.edu.cn, Xu, Guangwei1, Wang, Yuangang2, Lv, Yuanjie2, Feng, Zhihong2, ga917vv@163.com, Long, Shibing1
Source: Semiconductor Science & Technology; Jan2026, Vol. 41 Issue 1, p1-8, 8p
Database: Applied Science & Technology Source
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