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Silicon Nanowire Gate‐All‐Around Cold Source MOSFET With Ultralow Power Dissipation: A Machine‐Learning‐Hamiltonian Accelerated Design.

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Bibliographic Details
Title:	Silicon Nanowire Gate‐All‐Around Cold Source MOSFET With Ultralow Power Dissipation: A Machine‐Learning‐Hamiltonian Accelerated Design.
Authors:	Wang, Kang^1,2, Huang, Menglin^1,2, menglinhuang@fudan.edu.cn, Dai, Zhenxing², Yan, Saichao^1,2, Guo, Zhixin³, Xiang, Hongjun², Gong, Xin‐Gao², Chen, Shiyou^1,2, chensy@fudan.edu.cn
Source:	Advanced Functional Materials; 1/15/2026, Vol. 36 Issue 5, p1-10, 10p
Database:	Applied Science & Technology Source

Description
ISSN:	1616301X
DOI:	10.1002/adfm.202513807