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Silicon Nanowire Gate‐All‐Around Cold Source MOSFET With Ultralow Power Dissipation: A Machine‐Learning‐Hamiltonian Accelerated Design.

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Title: Silicon Nanowire Gate‐All‐Around Cold Source MOSFET With Ultralow Power Dissipation: A Machine‐Learning‐Hamiltonian Accelerated Design.
Authors: Wang, Kang1,2, Huang, Menglin1,2, menglinhuang@fudan.edu.cn, Dai, Zhenxing2, Yan, Saichao1,2, Guo, Zhixin3, Xiang, Hongjun2, Gong, Xin‐Gao2, Chen, Shiyou1,2, chensy@fudan.edu.cn
Source: Advanced Functional Materials; 1/15/2026, Vol. 36 Issue 5, p1-10, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 190936883
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Silicon Nanowire Gate‐All‐Around Cold Source MOSFET With Ultralow Power Dissipation: A Machine‐Learning‐Hamiltonian Accelerated Design.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Functional+Materials%22">Advanced Functional Materials</searchLink>; 1/15/2026, Vol. 36 Issue 5, p1-10, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=190936883
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        Value: 10.1002/adfm.202513807
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        Text: English
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        PageCount: 10
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      – TitleFull: Silicon Nanowire Gate‐All‐Around Cold Source MOSFET With Ultralow Power Dissipation: A Machine‐Learning‐Hamiltonian Accelerated Design.
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              Text: 1/15/2026
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              Y: 2026
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