Atomic layer deposited HfZrO4-based memristive devices: annealing effect and multilevel storage capability.
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| Title: | Atomic layer deposited HfZrO4-based memristive devices: annealing effect and multilevel storage capability. |
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| Authors: | Ramesh, Rahul1, rahulk129@gmail.com, Stathopoulos, Spyros1, Kumar, Sanjay1,2, rahulk129@gmail.com, Levene, Hannah1, Yadav, Deepika1, Tsiamis, Andreas1, Prodromakis, Themis1, rahulk129@gmail.com |
| Source: | Frontiers in Nanotechnology (2673-3013); 2026, p1-9, 9p |
| Database: | Applied Science & Technology Source |
| ISSN: | 26733013 |
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| DOI: | 10.3389/fnano.2026.1729291 |
