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Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process

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Bibliographic Details
Title: Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process
Authors: Shima, Yukinori1, shima@t.sel.co.jp, Kurosaki, Daisuke1, Jincho, Masami1, Mashiyama, Mitsuo1, Watanabe, Masahiro1, Kumakura, Kayo1, Yasumoto, Seiji1, Dobashi, Masayoshi1, Koezuka, Junichi1, Saito, Motoharu2, Kusunoki, Koji2, Yamazaki, Shunpei2
Source: Journal of the Society for Information Display; May2026, Vol. 34 Issue 5, p343-350, 8p
Database: Applied Science & Technology Source
Description
ISSN:10710922
DOI:10.1002/jsid.70067