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Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process

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Title: Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process
Authors: Shima, Yukinori1, shima@t.sel.co.jp, Kurosaki, Daisuke1, Jincho, Masami1, Mashiyama, Mitsuo1, Watanabe, Masahiro1, Kumakura, Kayo1, Yasumoto, Seiji1, Dobashi, Masayoshi1, Koezuka, Junichi1, Saito, Motoharu2, Kusunoki, Koji2, Yamazaki, Shunpei2
Source: Journal of the Society for Information Display; May2026, Vol. 34 Issue 5, p343-350, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194048044
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Shima%2C+Yukinori%22">Shima, Yukinori</searchLink><relatesTo>1</relatesTo>, <i>shima@t.sel.co.jp</i><br /><searchLink fieldCode="AU" term="%22Kurosaki%2C+Daisuke%22">Kurosaki, Daisuke</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Jincho%2C+Masami%22">Jincho, Masami</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Mashiyama%2C+Mitsuo%22">Mashiyama, Mitsuo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Watanabe%2C+Masahiro%22">Watanabe, Masahiro</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Kumakura%2C+Kayo%22">Kumakura, Kayo</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yasumoto%2C+Seiji%22">Yasumoto, Seiji</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Dobashi%2C+Masayoshi%22">Dobashi, Masayoshi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Koezuka%2C+Junichi%22">Koezuka, Junichi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Saito%2C+Motoharu%22">Saito, Motoharu</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Kusunoki%2C+Koji%22">Kusunoki, Koji</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Yamazaki%2C+Shunpei%22">Yamazaki, Shunpei</searchLink><relatesTo>2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Journal+of+the+Society+for+Information+Display%22">Journal of the Society for Information Display</searchLink>; May2026, Vol. 34 Issue 5, p343-350, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194048044
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1002/jsid.70067
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 8
        StartPage: 343
    Titles:
      – TitleFull: Normally‐Off Top‐Gate Self‐Aligned Field‐Effect Transistor Including Crystal InOx Formed by Hydrogen Gas‐Free Sputtering With Channel Length of 3 μm and High Field‐Effect Mobility Over 75 cm 2 /Vs Fabricated through 400°C Process
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Shima, Yukinori
      – PersonEntity:
          Name:
            NameFull: Kurosaki, Daisuke
      – PersonEntity:
          Name:
            NameFull: Jincho, Masami
      – PersonEntity:
          Name:
            NameFull: Mashiyama, Mitsuo
      – PersonEntity:
          Name:
            NameFull: Watanabe, Masahiro
      – PersonEntity:
          Name:
            NameFull: Kumakura, Kayo
      – PersonEntity:
          Name:
            NameFull: Yasumoto, Seiji
      – PersonEntity:
          Name:
            NameFull: Dobashi, Masayoshi
      – PersonEntity:
          Name:
            NameFull: Koezuka, Junichi
      – PersonEntity:
          Name:
            NameFull: Saito, Motoharu
      – PersonEntity:
          Name:
            NameFull: Kusunoki, Koji
      – PersonEntity:
          Name:
            NameFull: Yamazaki, Shunpei
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 05
              Text: May2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 10710922
          Numbering:
            – Type: volume
              Value: 34
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: Journal of the Society for Information Display
              Type: main
ResultId 1