Crystal quality and oxygen incorporation in ultra-high-rate GaN growth through oxide vapor-phase epitaxy.
Saved in:
| Title: | Crystal quality and oxygen incorporation in ultra-high-rate GaN growth through oxide vapor-phase epitaxy. |
|---|---|
| Authors: | Usami, S.1, usami@eei.eng.osaka-u.ac.jp, Yamada, D.1, Higashiyama, R.1, Imanishi, M.1, Takino, J.2, Sumi, T.2, Okayama, Y.2, Hata, M.3, Isemura, M.4, Mori, Y.1 |
| Source: | Applied Physics Letters; 6/1/2026, Vol. 128 Issue 22, p1-5, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
|---|---|
| DOI: | 10.1063/5.0331858 |
