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Crystal quality and oxygen incorporation in ultra-high-rate GaN growth through oxide vapor-phase epitaxy.

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Title: Crystal quality and oxygen incorporation in ultra-high-rate GaN growth through oxide vapor-phase epitaxy.
Authors: Usami, S.1, usami@eei.eng.osaka-u.ac.jp, Yamada, D.1, Higashiyama, R.1, Imanishi, M.1, Takino, J.2, Sumi, T.2, Okayama, Y.2, Hata, M.3, Isemura, M.4, Mori, Y.1
Source: Applied Physics Letters; 6/1/2026, Vol. 128 Issue 22, p1-5, 5p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 194356608
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Crystal quality and oxygen incorporation in ultra-high-rate GaN growth through oxide vapor-phase epitaxy.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Usami%2C+S%2E%22">Usami, S.</searchLink><relatesTo>1</relatesTo>, <i>usami@eei.eng.osaka-u.ac.jp</i><br /><searchLink fieldCode="AU" term="%22Yamada%2C+D%2E%22">Yamada, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Higashiyama%2C+R%2E%22">Higashiyama, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Imanishi%2C+M%2E%22">Imanishi, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Takino%2C+J%2E%22">Takino, J.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Sumi%2C+T%2E%22">Sumi, T.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Okayama%2C+Y%2E%22">Okayama, Y.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Hata%2C+M%2E%22">Hata, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Isemura%2C+M%2E%22">Isemura, M.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Mori%2C+Y%2E%22">Mori, Y.</searchLink><relatesTo>1</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 6/1/2026, Vol. 128 Issue 22, p1-5, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=194356608
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/5.0331858
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 1
    Titles:
      – TitleFull: Crystal quality and oxygen incorporation in ultra-high-rate GaN growth through oxide vapor-phase epitaxy.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Usami, S.
      – PersonEntity:
          Name:
            NameFull: Yamada, D.
      – PersonEntity:
          Name:
            NameFull: Higashiyama, R.
      – PersonEntity:
          Name:
            NameFull: Imanishi, M.
      – PersonEntity:
          Name:
            NameFull: Takino, J.
      – PersonEntity:
          Name:
            NameFull: Sumi, T.
      – PersonEntity:
          Name:
            NameFull: Okayama, Y.
      – PersonEntity:
          Name:
            NameFull: Hata, M.
      – PersonEntity:
          Name:
            NameFull: Isemura, M.
      – PersonEntity:
          Name:
            NameFull: Mori, Y.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 06
              Text: 6/1/2026
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-print
              Value: 00036951
          Numbering:
            – Type: volume
              Value: 128
            – Type: issue
              Value: 22
          Titles:
            – TitleFull: Applied Physics Letters
              Type: main
ResultId 1