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Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories.

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Bibliographic Details
Title:	Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories.
Authors:	Kim, Eunjin¹, Woo, Jiyong¹, jiyong.woo@knu.ac.kr
Source:	Advanced Materials Interfaces; 6/9/2026, Vol. 13 Issue 11, p1-18, 18p
Database:	Applied Science & Technology Source

Description
ISSN:	21967350
DOI:	10.1002/admi.202600003