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Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories.

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Bibliographic Details
Title: Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories.
Authors: Kim, Eunjin1, Woo, Jiyong1, jiyong.woo@knu.ac.kr
Source: Advanced Materials Interfaces; 6/9/2026, Vol. 13 Issue 11, p1-18, 18p
Database: Applied Science & Technology Source
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