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Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant

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Bibliographic Details
Title: Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant
Authors: Alvarez, D.1, Abou-Khalil, M.J.2, Russ, C.3, Chatty, K.2, Gauthier, R.2, Kontos, D.2, Li, J.2, Seguin, C.2, Halbach, R.2
Source: Microelectronics Reliability; Sep2006, Vol. 46 Issue 9-11, p1597-1602, 6p
Database: Applied Science & Technology Source
Description
ISSN:00262714
DOI:10.1016/j.microrel.2006.07.041