Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs.

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Bibliographic Details
Title: Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs.
Authors: Zoccal, L. B.1, Diniz, J. A.1, Doi, I.1, Swart, J. W.1, Daltrini, A. M.2, daltrini@led.unicamp.br, Moshkalyov, S. A.2
Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jul/Aug2006, Vol. 24 Issue 4, p1762-1765, 4p, 1 Diagram, 1 Chart, 5 Graphs
Database: Applied Science & Technology Source
Description
ISSN:10711023
DOI:10.1116/1.2209998