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Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs.

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Title: Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs.
Authors: Zoccal, L. B.1, Diniz, J. A.1, Doi, I.1, Swart, J. W.1, Daltrini, A. M.2, daltrini@led.unicamp.br, Moshkalyov, S. A.2
Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jul/Aug2006, Vol. 24 Issue 4, p1762-1765, 4p, 1 Diagram, 1 Chart, 5 Graphs
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 23074176
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs.
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  Data: <searchLink fieldCode="AU" term="%22Zoccal%2C+L%2E+B%2E%22">Zoccal, L. B.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Diniz%2C+J%2E+A%2E%22">Diniz, J. A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Doi%2C+I%2E%22">Doi, I.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Swart%2C+J%2E+W%2E%22">Swart, J. W.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Daltrini%2C+A%2E+M%2E%22">Daltrini, A. M.</searchLink><relatesTo>2</relatesTo>, <i>daltrini@led.unicamp.br</i><br /><searchLink fieldCode="AU" term="%22Moshkalyov%2C+S%2E+A%2E%22">Moshkalyov, S. A.</searchLink><relatesTo>2</relatesTo>
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=23074176
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1116/1.2209998
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 1762
    Titles:
      – TitleFull: Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs.
        Type: main
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            NameFull: Zoccal, L. B.
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            NameFull: Diniz, J. A.
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            NameFull: Doi, I.
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            NameFull: Swart, J. W.
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            NameFull: Daltrini, A. M.
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            NameFull: Moshkalyov, S. A.
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            – D: 01
              M: 07
              Text: Jul/Aug2006
              Type: published
              Y: 2006
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              Value: 24
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            – TitleFull: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures
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