The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure
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| Title: | The effect of oxygen in Ru gate electrode on effective work function of Ru/HfO2 stack structure |
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| Authors: | Nabatame, T.1, toshihide.nabatame@aist.go.jp, Segawa, K2, Kadoshima, M.1, Takaba, H.1, Iwamoto, K.1, Kimura, S.2, Nunoshige, Y.2, Satake, H.1, Ohishi, T.2, Toriumi, Akira3,4 |
| Source: | Materials Science in Semiconductor Processing; Dec2006, Vol. 9 Issue 6, p975-979, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 13698001 |
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| DOI: | 10.1016/j.mssp.2006.10.013 |
