Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress

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Bibliographic Details
Title: Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress
Authors: Kuo, Y.J.1, Chang, T.C.1,2,3, tcchang@mail.phys.nsysu.edu.tw, Yeh, P.H.4, Chen, S.C.2, Dai, C.H.1, Chao, C.H.5, Young, T.F.5, Cheng, Osbert6, Huang, C.T.6
Source: Thin Solid Films; Jan2009, Vol. 517 Issue 5, p1715-1718, 4p
Database: Applied Science & Technology Source
Description
ISSN:00406090
DOI:10.1016/j.tsf.2008.09.031