Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa...

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Bibliographic Details
Title: Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa...
Authors: Notomi, M., Naganuma, M., Nishida, T., Tamamura, T., Iwamura, H., Nojima, S., Okamoto, M.
Source: Applied Physics Letters; 2/18/1991, Vol. 58 Issue 7, p720, 3p, 3 Black and White Photographs, 6 Diagrams, 2 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.104526