APA (7th ed.) Citation

Notomi, M., Naganuma, M., Nishida, T., Tamamura, T., Iwamura, H., Nojima, S., & Okamoto, M. (1991). Clear energy level shift in ultranarrow InGaAs/InP quantum well wires fabricated by reverse mesa.. Applied Physics Letters, 58(7), 720. https://doi.org/10.1063/1.104526

Chicago Style (17th ed.) Citation

Notomi, M., M. Naganuma, T. Nishida, T. Tamamura, H. Iwamura, S. Nojima, and M. Okamoto. "Clear Energy Level Shift in Ultranarrow InGaAs/InP Quantum Well Wires Fabricated by Reverse Mesa.." Applied Physics Letters 58, no. 7 (1991): 720. https://doi.org/10.1063/1.104526.

MLA (9th ed.) Citation

Notomi, M., et al. "Clear Energy Level Shift in Ultranarrow InGaAs/InP Quantum Well Wires Fabricated by Reverse Mesa.." Applied Physics Letters, vol. 58, no. 7, 1991, p. 720, https://doi.org/10.1063/1.104526.