Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons.
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| Title: | Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons. |
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| Authors: | Lai, S. T., Nener, B. D., Faraone, L. |
| Source: | Journal of Applied Physics; January 15 1993, Vol. 73, p640-647, 8p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.353375 |
