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Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons.

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Bibliographic Details
Title: Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons.
Authors: Lai, S. T., Nener, B. D., Faraone, L.
Source: Journal of Applied Physics; January 15 1993, Vol. 73, p640-647, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500083948
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons.
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  Data: <searchLink fieldCode="AU" term="%22Lai%2C+S%2E+T%2E%22">Lai, S. T.</searchLink><br /><searchLink fieldCode="AU" term="%22Nener%2C+B%2E+D%2E%22">Nener, B. D.</searchLink><br /><searchLink fieldCode="AU" term="%22Faraone%2C+L%2E%22">Faraone, L.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; January 15 1993, Vol. 73, p640-647, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500083948
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.353375
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 640
    Titles:
      – TitleFull: Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons.
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            NameFull: Lai, S. T.
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            NameFull: Nener, B. D.
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            NameFull: Faraone, L.
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            – D: 15
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              Text: January 15 1993
              Type: published
              Y: 1993
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              Value: 73
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            – TitleFull: Journal of Applied Physics
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