Depth profiles of thermal donors formed at 450°C in oxygen-rich n-type silicon.
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| Title: | Depth profiles of thermal donors formed at 450°C in oxygen-rich n-type silicon. |
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| Authors: | Tokuda, Y., Katayama, M., Hattori, T. |
| Source: | Semiconductor Science & Technology; February 1993, Vol. 8, p163-166, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 02681242 |
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| DOI: | 10.1088/0268-1242/8/2/003 |
