Implantation temperature effect on polycrystalline silicon by ion shower doping.

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Bibliographic Details
Title: Implantation temperature effect on polycrystalline silicon by ion shower doping.
Authors: Mishima, Y., Takei, M., Matsumoto, N.
Source: Journal of Applied Physics; December 15 1993, Vol. 74, p7114-7117, 4p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.355026