Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers.

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Bibliographic Details
Title: Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers.
Authors: Nakashima, S., Katayama, T., Miyamura, Y.
Source: Journal of the Electrochemical Society; January 1996, Vol. 143, p244-251, 8p
Database: Applied Science & Technology Source
Description
ISSN:00134651
DOI:10.1149/1.1836416