APA (7th ed.) Citation

Nakashima, S., Katayama, T., & Miyamura, Y. (1996). Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers. Journal of the Electrochemical Society, 143, 244. https://doi.org/10.1149/1.1836416

Chicago Style (17th ed.) Citation

Nakashima, S., T. Katayama, and Y. Miyamura. "Investigations on High-temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers." Journal of the Electrochemical Society 143 (1996): 244. https://doi.org/10.1149/1.1836416.

MLA (9th ed.) Citation

Nakashima, S., et al. "Investigations on High-temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers." Journal of the Electrochemical Society, vol. 143, 1996, p. 244, https://doi.org/10.1149/1.1836416.