Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers.

Saved in:
Bibliographic Details
Title: Investigations on high-temperature thermal oxidation process at top and bottom interfaces of top silicon of SIMOX wafers.
Authors: Nakashima, S., Katayama, T., Miyamura, Y.
Source: Journal of the Electrochemical Society; January 1996, Vol. 143, p244-251, 8p
Database: Applied Science & Technology Source
Be the first to leave a comment!
You must be logged in first