Dopant-induced lattice dilation in n-type InP homoepitaxial layers.

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Bibliographic Details
Title: Dopant-induced lattice dilation in n-type InP homoepitaxial layers.
Authors: Ferrari, C., Franzosi, P.
Source: Journal of Applied Physics; May 1 1996, Vol. 79, p6890-6894, 5p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.361512