Otsuka, N., Kito, M., & Ishino, M. (1998). Control of double diffusion front unintentionally penetrated from a Zn doped InP layer during metalorganic vapor phase epitaxy. Journal of Applied Physics, 84(8), 4239. https://doi.org/10.1063/1.368696
Chicago Style (17th ed.) CitationOtsuka, N., M. Kito, and M. Ishino. "Control of Double Diffusion Front Unintentionally Penetrated from a Zn Doped InP Layer During Metalorganic Vapor Phase Epitaxy." Journal of Applied Physics 84, no. 8 (1998): 4239. https://doi.org/10.1063/1.368696.
MLA (9th ed.) CitationOtsuka, N., et al. "Control of Double Diffusion Front Unintentionally Penetrated from a Zn Doped InP Layer During Metalorganic Vapor Phase Epitaxy." Journal of Applied Physics, vol. 84, no. 8, 1998, p. 4239, https://doi.org/10.1063/1.368696.