APA (7th ed.) Citation

Takagi, T., Takechi, K., & Nakagawa, Y. (1998). High rate deposition of a-Si: H and a-SiNx:H by VHF PECVD. Vacuum, 51(4), 751. https://doi.org/10.1016/S0042-207X(98)00284-X

Chicago Style (17th ed.) Citation

Takagi, T., K. Takechi, and Y. Nakagawa. "High Rate Deposition of A-Si: H and A-SiNx:H by VHF PECVD." Vacuum 51, no. 4 (1998): 751. https://doi.org/10.1016/S0042-207X(98)00284-X.

MLA (9th ed.) Citation

Takagi, T., et al. "High Rate Deposition of A-Si: H and A-SiNx:H by VHF PECVD." Vacuum, vol. 51, no. 4, 1998, p. 751, https://doi.org/10.1016/S0042-207X(98)00284-X.