High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD.
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| Title: | High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD. |
|---|---|
| Authors: | Takagi, T., Takechi, K., Nakagawa, Y. |
| Source: | Vacuum; December 1998, Vol. 51 Issue 4, p751-755, 5p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 500456141 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Takagi%2C+T%2E%22">Takagi, T.</searchLink><br /><searchLink fieldCode="AU" term="%22Takechi%2C+K%2E%22">Takechi, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Nakagawa%2C+Y%2E%22">Nakagawa, Y.</searchLink> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Vacuum%22">Vacuum</searchLink>; December 1998, Vol. 51 Issue 4, p751-755, 5p |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500456141 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1016/S0042-207X(98)00284-X Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 5 StartPage: 751 Titles: – TitleFull: High rate deposition of a-Si:H and a-SiNx:H by VHF PECVD. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Takagi, T. – PersonEntity: Name: NameFull: Takechi, K. – PersonEntity: Name: NameFull: Nakagawa, Y. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 12 Text: December 1998 Type: published Y: 1998 Identifiers: – Type: issn-print Value: 0042207X Numbering: – Type: volume Value: 51 – Type: issue Value: 4 Titles: – TitleFull: Vacuum Type: main |
| ResultId | 1 |
