Damage formation during 1.0 MeV Si self-implantation at low temperatures.

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Bibliographic Details
Title:	Damage formation during 1.0 MeV Si self-implantation at low temperatures.
Authors:	Huang, M. B., Mitchell, I. V.
Source:	Journal of Electronic Materials; April 1999, Vol. 28 Issue 4, p385-389, 5p
Database:	Applied Science & Technology Source

Description
ISSN:	03615235
DOI:	10.1007/s11664-999-0238-0