Damage formation during 1.0 MeV Si self-implantation at low temperatures.
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| Title: | Damage formation during 1.0 MeV Si self-implantation at low temperatures. |
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| Authors: | Huang, M. B., Mitchell, I. V. |
| Source: | Journal of Electronic Materials; April 1999, Vol. 28 Issue 4, p385-389, 5p |
| Database: | Applied Science & Technology Source |
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