APA (7th ed.) Citation

Roth, E. G., Holland, O. W., & Venezia, V. C. (1997). Methods of defect-engineering shallow junctions formed by B+-implantation in Si. Journal of Electronic Materials, 26, 1349. https://doi.org/10.1007/s11664-997-0083-y

Chicago Style (17th ed.) Citation

Roth, E. G., O. W. Holland, and V. C. Venezia. "Methods of Defect-engineering Shallow Junctions Formed by B+-implantation in Si." Journal of Electronic Materials 26 (1997): 1349. https://doi.org/10.1007/s11664-997-0083-y.

MLA (9th ed.) Citation

Roth, E. G., et al. "Methods of Defect-engineering Shallow Junctions Formed by B+-implantation in Si." Journal of Electronic Materials, vol. 26, 1997, p. 1349, https://doi.org/10.1007/s11664-997-0083-y.