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Methods of defect-engineering shallow junctions formed by B+-implantation in Si.

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Title: Methods of defect-engineering shallow junctions formed by B+-implantation in Si.
Authors: Roth, E. G., Holland, O. W., Venezia, V. C.
Source: Journal of Electronic Materials; November 1997, Vol. 26, p1349-1354, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500522671
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Methods of defect-engineering shallow junctions formed by B+-implantation in Si.
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  Data: <searchLink fieldCode="AU" term="%22Roth%2C+E%2E+G%2E%22">Roth, E. G.</searchLink><br /><searchLink fieldCode="AU" term="%22Holland%2C+O%2E+W%2E%22">Holland, O. W.</searchLink><br /><searchLink fieldCode="AU" term="%22Venezia%2C+V%2E+C%2E%22">Venezia, V. C.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; November 1997, Vol. 26, p1349-1354, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500522671
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      – Type: doi
        Value: 10.1007/s11664-997-0083-y
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      – Code: eng
        Text: English
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        PageCount: 6
        StartPage: 1349
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      – TitleFull: Methods of defect-engineering shallow junctions formed by B+-implantation in Si.
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            NameFull: Roth, E. G.
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            NameFull: Holland, O. W.
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            NameFull: Venezia, V. C.
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              Text: November 1997
              Type: published
              Y: 1997
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              Value: 26
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