Dependency of p-n junction depth on ion species implanted in HgCdTe.

Saved in:

Bibliographic Details
Title:	Dependency of p-n junction depth on ion species implanted in HgCdTe.
Authors:	Ebe, H., Tanaka, M., Miyamoto, Y.
Source:	Journal of Electronic Materials; June 1999, Vol. 28 Issue 6, p854-857, 4p
Database:	Applied Science & Technology Source

Description
ISSN:	03615235
DOI:	10.1007/s11664-999-0083-1