APA (7th ed.) Citation

Ebe, H., Tanaka, M., & Miyamoto, Y. (1999). Dependency of p-n junction depth on ion species implanted in HgCdTe. Journal of Electronic Materials, 28(6), 854. https://doi.org/10.1007/s11664-999-0083-1

Chicago Style (17th ed.) Citation

Ebe, H., M. Tanaka, and Y. Miyamoto. "Dependency of P-n Junction Depth on Ion Species Implanted in HgCdTe." Journal of Electronic Materials 28, no. 6 (1999): 854. https://doi.org/10.1007/s11664-999-0083-1.

MLA (9th ed.) Citation

Ebe, H., et al. "Dependency of P-n Junction Depth on Ion Species Implanted in HgCdTe." Journal of Electronic Materials, vol. 28, no. 6, 1999, p. 854, https://doi.org/10.1007/s11664-999-0083-1.