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Dependency of p-n junction depth on ion species implanted in HgCdTe.

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Title: Dependency of p-n junction depth on ion species implanted in HgCdTe.
Authors: Ebe, H., Tanaka, M., Miyamoto, Y.
Source: Journal of Electronic Materials; June 1999, Vol. 28 Issue 6, p854-857, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500538359
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PubType: Academic Journal
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  Data: Dependency of p-n junction depth on ion species implanted in HgCdTe.
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  Data: <searchLink fieldCode="AU" term="%22Ebe%2C+H%2E%22">Ebe, H.</searchLink><br /><searchLink fieldCode="AU" term="%22Tanaka%2C+M%2E%22">Tanaka, M.</searchLink><br /><searchLink fieldCode="AU" term="%22Miyamoto%2C+Y%2E%22">Miyamoto, Y.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>; June 1999, Vol. 28 Issue 6, p854-857, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500538359
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      – Type: doi
        Value: 10.1007/s11664-999-0083-1
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 854
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      – TitleFull: Dependency of p-n junction depth on ion species implanted in HgCdTe.
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            NameFull: Ebe, H.
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            NameFull: Tanaka, M.
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            NameFull: Miyamoto, Y.
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            – D: 01
              M: 06
              Text: June 1999
              Type: published
              Y: 1999
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              Value: 28
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