Dependency of p-n junction depth on ion species implanted in HgCdTe.

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Bibliographic Details
Title: Dependency of p-n junction depth on ion species implanted in HgCdTe.
Authors: Ebe, H., Tanaka, M., Miyamoto, Y.
Source: Journal of Electronic Materials; June 1999, Vol. 28 Issue 6, p854-857, 4p
Database: Applied Science & Technology Source
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