Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates.
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| Title: | Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates. |
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| Authors: | Kim, H.-S., Ko, D.-H., Bae, D.-L. |
| Source: | Journal of Electronic Materials; April 1998, Vol. 27 Issue 4, pL21-L25, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 03615235 |
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| DOI: | 10.1007/s11664-998-0418-3 |
