APA (7th ed.) Citation

Kim, H., Ko, D., & Bae, D. (1998). Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates. Journal of Electronic Materials, 27(4), L21. https://doi.org/10.1007/s11664-998-0418-3

Chicago Style (17th ed.) Citation

Kim, H.-S, D.-H Ko, and D.-L Bae. "Gate Oxide Reliabilities in MOS (metal-oxide-semiconductor) Structures with Ti-polycide Gates." Journal of Electronic Materials 27, no. 4 (1998): L21. https://doi.org/10.1007/s11664-998-0418-3.

MLA (9th ed.) Citation

Kim, H.-S, et al. "Gate Oxide Reliabilities in MOS (metal-oxide-semiconductor) Structures with Ti-polycide Gates." Journal of Electronic Materials, vol. 27, no. 4, 1998, p. L21, https://doi.org/10.1007/s11664-998-0418-3.