Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide.
Saved in:
| Title: | Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide. |
|---|---|
| Authors: | Ang, C. H., Ling, C. H., Cheng, Z. Y. |
| Source: | Journal of Applied Physics; September 1 2000, Vol. 88 Issue 5, p2872-2876, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
|---|---|
| DOI: | 10.1063/1.1288169 |
