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Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide.

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Title: Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide.
Authors: Ang, C. H., Ling, C. H., Cheng, Z. Y.
Source: Journal of Applied Physics; September 1 2000, Vol. 88 Issue 5, p2872-2876, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 500620409
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide.
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  Data: <searchLink fieldCode="AU" term="%22Ang%2C+C%2E+H%2E%22">Ang, C. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Ling%2C+C%2E+H%2E%22">Ling, C. H.</searchLink><br /><searchLink fieldCode="AU" term="%22Cheng%2C+Z%2E+Y%2E%22">Cheng, Z. Y.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; September 1 2000, Vol. 88 Issue 5, p2872-2876, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=500620409
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      – Type: doi
        Value: 10.1063/1.1288169
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 2872
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      – TitleFull: Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide.
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            NameFull: Ang, C. H.
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            NameFull: Ling, C. H.
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            NameFull: Cheng, Z. Y.
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            – D: 01
              M: 09
              Text: September 1 2000
              Type: published
              Y: 2000
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              Value: 88
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