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Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide.

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Bibliographic Details
Title: Origin of temperature-sensitive hole current at low gate voltage regime in ultrathin gate oxide.
Authors: Ang, C. H., Ling, C. H., Cheng, Z. Y.
Source: Journal of Applied Physics; September 1 2000, Vol. 88 Issue 5, p2872-2876, 5p
Database: Applied Science & Technology Source
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