Origin of the nonradiative <112̄0> line defect in lateral epitaxy-grown GaN on SiC substrates.
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| Title: | Origin of the nonradiative <112̄0> line defect in lateral epitaxy-grown GaN on SiC substrates. |
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| Authors: | Hacke, P., Domen, K., Kuramata, A. |
| Source: | Applied Physics Letters; May 1 2000, Vol. 76 Issue 18, p2547-2549, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.126404 |
