APA (7th ed.) Citation

Hacke, P., Domen, K., & Kuramata, A. (2000). Origin of the nonradiative <112̄0> line defect in lateral epitaxy-grown GaN on SiC substrates. Applied Physics Letters, 76(18), 2547. https://doi.org/10.1063/1.126404

Chicago Style (17th ed.) Citation

Hacke, P., K. Domen, and A. Kuramata. "Origin of the Nonradiative <112̄0> Line Defect in Lateral Epitaxy-grown GaN on SiC Substrates." Applied Physics Letters 76, no. 18 (2000): 2547. https://doi.org/10.1063/1.126404.

MLA (9th ed.) Citation

Hacke, P., et al. "Origin of the Nonradiative <112̄0> Line Defect in Lateral Epitaxy-grown GaN on SiC Substrates." Applied Physics Letters, vol. 76, no. 18, 2000, p. 2547, https://doi.org/10.1063/1.126404.